darlington transistors pnp silicon maximum ratings rating symbol mpsa62 mpsa63 mpsa64 unit collectoremitter voltage v ces 20 30 vdc collectorbase voltage v cbo 20 30 vdc emitterbase voltage v ebo 10 vdc collector current e continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t a = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 100 m adc, v be = 0) mpsa62 mpsa63, mpsa64 v (br)ces 20 30 e e vdc collector cutoff current (v cb = 15 vdc, i e = 0) mpsa62 (v cb = 30 vdc, i e = 0) mpsa63, mpsa64 i cbo e e 100 100 nadc emitter cutoff current (v eb = 10 vdc, i c = 0) i ebo e 100 nadc preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: mpsa62/d mpsa62 mpsa63 mpsa64 case 2904, style 1 to92 (to226aa) 1 2 3 *on semiconductor preferred device * mpsa55, mpsa56 for specifications, see mpsa05, mpsa06 data collector 3 base 2 emitter 1
mpsa62 mpsa63 mpsa64 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (1) dc current gain (i c = 10 madc, v ce = 5.0 vdc) mpsa63 mpsa64 mpsa62 (i c = 100 madc, v ce = 5.0 vdc) mpsa63 mpsa64 h fe 5,000 10,000 20,000 10,000 20,000 e e e e e e collectoremitter saturation voltage (i c = 10 madc, i b = 0.01 madc) mpsa62 (i c = 100 madc, i b = 0.1 madc) mpsa63, mpsa64 v ce(sat) e e 1.0 1.5 vdc baseemitter on voltage (i c = 10 madc, v ce = 5.0 vdc) mpsa62 (i c = 100 madc, v ce = 5.0 vdc) mpsa63, mpsa64 v be(on) e e 1.4 2.0 vdc smallsignal characteristics currentgain e bandwidth product (2) (i c = 100 madc, v ce = 5.0 vdc, f = 100 mhz) mpsa63, mpsa64 f t 125 e mhz 1. pulse test: pulse width 300 s; duty cycle 2.0%. 2. f t = |h fe | f test .
mpsa62 mpsa63 mpsa64 http://onsemi.com 3 figure 1. dc current gain i c , collector current (ma) 200 -1.0 2.0 h fe , dc current gain (x1.0 k) t a = 125 c 25 c -55 c v ce = -2.0 v -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -100 -300 100 70 50 30 20 10 7.0 5.0 3.0 -0.3 -0.5 -0.7 -70 -200 -5.0 v -10 v i c , collector current (ma) figure 2. aono voltage v, voltage (volts) -2.0 0 -0.3 t a = 25 c v be(on) @ v ce = -5.0 v -1.6 -1.2 -0.8 -0.4 v ce(sat) @ i c /i b = 1000 i c /i b = 100 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 -100 -200 -300 i b , base current ( m a) figure 3. collector saturation region v ce , collector-emitter voltage (volts ) -2.0 -0.6 t a = 25 c i c = -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.1-0.2 -1 -2 -5 -10 -20 -50 -100-200 -500 -0.5 -1k-2k -10k -10 ma -50 ma -100 ma -175 ma -300 ma 10 4.0 3.0 2.0 0.1 figure 4. high frequency current gain i c , collector current (ma) v ce = -5.0 v f = 100 mhz t a = 25 c |h fe |, high frequency current gain 1.0 0.4 0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1k v ce , collector voltage (volts) -6.0 i c , collector current (ma) -10 -20 figure 5. active region, safe operating area current limit thermal limit second breakdown limit -300 -200 -100 -50 -20 -10 -40 -60 100 m s 1.0 ms t a = 25 c -1000 (duty cycle 10%) 1.0 s t c = 25 c mpsa62 -1.0 -2.0 -4.0 mpsa63 v be(sat) @ i c /i b = 100 -5k
mpsa62 mpsa63 mpsa64 http://onsemi.com 4 package dimensions case 2911 issue al to92 (to226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mpsa62/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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